TetraFET DMD1006 DMD1006-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA D 2 1 A 3 G( 2 pls) F M K J I D2 PIN 1 SOURCE PIN 3 GATE DIM Millimetres Tol. A 19.43 0.13 B 9.78 0.13 C 9.40 0.10 D 45° 5° E 1.63R 0.13 F 27.94 0.13 G 12.70 0.13 H 1.57 0.13 I 34.04 0.13 J 1.01 0.13 K 19.94 0.25 L 0.10 0.25 M 4..
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN - 15 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
438W (219W -A Version)
BVDSS
Drain
– Source Breakdown Voltage
70V
BVGSS
Gate
– Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
Semelab Plc reserves the right to change test conditions, parameter .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMD1006 |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | DMD1009 |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | DMD1009-A |
Seme LAB |
METAL GATE RF SILICON FET | |
4 | DMD1010 |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | DMD1010-A |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | DMD1012 |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | DMD1012-A |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | DMD1020 |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | DMD1020-A |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | DMD1028 |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | DMD1028-A |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | DMD1029 |
Seme LAB |
METAL GATE RF SILICON FET |