DMD1010-A - Seme LAB

DMD1010-A METAL GATE RF SILICON FET

TetraFET DMD1010 DMD1010-A ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) 1 HD B 2 3 5 4 E (4 pls) F I G (typ) P (2 pls) A PIN 1 PIN 3 PIN 5 NM O D1 SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM Millimetres Tol. A 15.24 0.50 B 10.80 0.13 C 45° 5° D 9.78 0.13 E 8.38 0.13 F 27.94 0.13 G 1.52R.

Features

• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz PD BVDSS BVGSS ID(sat) Tstg Tj
* Per Side Power Dissipation Drain
  – Source Breakdown Voltage
* Gate
  – Source Breakdown Voltage
* Drain Current
* Storage Temperature Maximum Operating Junction Temperature 648W (389W -A Version) 70V ±20V 20A
  –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished .