DMBTA44 - Dc Components

DMBTA44 NPN Transistor

Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Te.

Features

Volatge Collector Cutoff Current Emitter Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4 Cob 380µs, Duty Cycle Min 450 400 6 40 50 45 40 2% Typ 4 Max 100 500 100 0.4 0.5 0.75 0.75 300 6 Unit V V V nA nA nA V V V V pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=400V VCE=400V VEB=4V IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V VCB=20V, f=1MHz Collector-Emitter Saturation .