DMBTA05 - Dc Components

DMBTA05 NPN Transistor

Designed for general purpose amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperat.

Features

ge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle Min 60 60 4 80 50 100 2% Typ - Max 100 100 0.25 1.2 250 - Unit V V V nA nA V V MHz Test Conditions IC=100µA IC=1mA IE=100µA VCB=60V VCE=60V IC=100mA, IB=10mA IC=100mA, VCE=1V IC=10mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=2V, f=100MHz Transition Frequency (1)Pulse Test: Pulse Width .