Designed for general purpose amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperat.
tge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle Min 80 80 4 50 50 100 2% Typ - Max 100 100 0.25 1.2 - Unit V V V nA nA V V MHz Test Conditions IC=100µA IC=1mA IE=100µA VCB=80V VCE=60V IC=100mA, IB=10mA IC=100mA, VCE=1V IC=10mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=2V, f=100MHz Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) Transition Frequency (1)Pulse Test: Pulse Width .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMBTA05 |
Dc Components |
NPN Transistor | |
2 | DMBTA13 |
Dc Components |
NPN Transistor | |
3 | DMBTA14 |
Dc Components |
NPN Transistor | |
4 | DMBTA42 |
Dc Components |
NPN Transistor | |
5 | DMBTA43 |
Dc Components |
NPN Transistor | |
6 | DMBTA44 |
Dc Components |
NPN Transistor | |
7 | DMBTA55 |
Dc Components |
NPN Transistor | |
8 | DMBTA56 |
Dc Components |
NPN Transistor | |
9 | DMBTA64 |
Dc Components |
NPN Transistor | |
10 | DMBTA92 |
Dc Components |
NPN Transistor | |
11 | DMBT1015 |
Dc Components |
PNP Transistor | |
12 | DMBT1815 |
Dc Components |
PNP Transistor |