DMBT1815 - Dc Components

DMBT1815 PNP Transistor

Designed for use in driver stage of AF amplifier and general purpose amplification. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power.

Features

Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle Min 60 50 5 120 25 80 2% Typ - Max 100 100 0.25 1 700 3.5 Unit V V V nA nA V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA IC=2mA, VCE=6V IC=150mA, VCE=6V IC=1mA, VCE=10V, f=100MHz VCB=10V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain(1) Transition F.