These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well.
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
December 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D5N50 |
Alpha & Omega Semiconductors |
5A N-Channel MOSFET | |
2 | D5N40 |
SemiHow |
HFD5N40 | |
3 | D5N60 |
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET | |
4 | D5NK40Z |
STMicroelectronics |
STD5NK40Z | |
5 | D5NK50Z |
STMicroelectronics |
STD5NK50Z | |
6 | D5NM50 |
STMicroelectronics |
STD5NM50 | |
7 | D5NM60 |
STMicroelectronics |
STD5NM60 | |
8 | D5001UK |
Seme LAB |
METAL GATE RF SILICON FET | |
9 | D5002UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D5006UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D5007-H2-DIM-MR16 |
WINSUN |
LED SPOT LIGHT | |
12 | D5007UK |
Seme LAB |
METAL GATE RF SILICON FET |