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D5N50F |
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| Part Number | D5N50F |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant December 2007 UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for ... |
| Document |
 D5N50F Data Sheet
PDF 625.17KB |
| Distributor | Stock | Price | Buy |
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