D5006UK - Seme LAB

D5006UK METAL GATE RF SILICON FET

TetraFET D5006UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 2 3 E FG 6 5 4 J D H K QN PIN 1 PIN 3 PIN 5 SOURCE SOURCE GATE DIM mm A 9.09 B 19.3 C 45° D 5.71 E 1.65R F 10.16 G 20.32 H 19.30 J 1.52R K 10.77 M 22.86 N 3.17 O 0.13 P 4.19 Q 6.35 M DV PIN 2 PIN 4 PIN 6 OP DRAIN SOURCE SOURCE Tol. 0.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 220W BVDSS Drain
  – Source Breakdown Voltage 125V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 21A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Webs.