D5N40 - SemiHow

D5N40 HFD5N40

HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.)  Extended Safe Operating .

Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 13 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.27 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25℃)
  – Continuous (TC.