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These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. DS2834 .
Order codes
VDS
RDS(on) max.
STB5NK50Z-1
STD5NK50ZT4
STP5NK50Z
500 V
1.5 Ω
STP5NK50ZFP
STU5NK50Z
• 100% avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
ID 4.4 A
Package I2PAK DPAK TO-220
TO-220FP IPAK
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high l.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D5NK40Z |
STMicroelectronics |
STD5NK40Z |
|
| 2 | D5N40 |
SemiHow |
HFD5N40 |
|
| 3 | D5N50 |
Alpha & Omega Semiconductors |
5A N-Channel MOSFET |
|
| 4 | D5N50F |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | D5N60 |
ROUM |
5A 600V N-channel Enhancement Mode Power MOSFET |
|
| 6 | D5NM50 |
STMicroelectronics |
STD5NM50 |
|
| 7 | D5NM60 |
STMicroelectronics |
STD5NM60 |
|
| 8 | D5001UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 9 | D5002UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 10 | D5006UK |
Seme LAB |
METAL GATE RF SILICON FET |
|
| 11 | D5007-H2-DIM-MR16 |
WINSUN |
LED SPOT LIGHT |
|
| 12 | D5007UK |
Seme LAB |
METAL GATE RF SILICON FET |
|