CSD88537ND - Texas Instruments

CSD88537ND 60V Dual N-Channel Power MOSFET

This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications. Top View 1 S1 2 G1 3 S2 4 G2 8 D1 7 D1 6 D2 5 D2 . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Th.

Features

•1 Ultra-Low Qg and Qgd
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free 2 Applications
• Half Bridge for Motor Control
• Synchronous Buck Converter 3 Description This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications. Top View 1 S1 2 G1 3 S2 4 G2 8 D1 7 D1 6 D2 5 D2 . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 14 2.3 VGS = 6 V VGS = 10 V .