CSD86311W1723 - Texas Instruments

CSD86311W1723 Dual N-Channel Power MOSFET

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC .

Features

1
• Dual N-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.7 mm × 2.3 mm
• Ultra Low Qg and Qgd
• Pb Free
• RoHS Compliant
• Halogen Free APPLICATIONS
• Battery Management
• Battery Protection
• DC-DC Converters PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 3.1 nC Qgd Gate Charge Gate to Drain 0.33 nC VGS = 2.5V 37 mΩ RDS(on) Drain to Source On Resistance VGS = 4.5V 31 mΩ VGS = 8V 29 mΩ VGS(th) Threshold Voltage 1 V Text Added for Spacing ORDERING INFORMATION Device Package Media Qty 1.7-mm × 2.3-mm CSD86311W1723 Wafer Lev.