CSD83325L - Texas Instruments

CSD83325L 12-V Dual N-Channel Power MOSFET

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices. Top View S1 S2 G1 G2 S1 S2 Configuration Product Summary TA = 25°C TYPICAL VALUE .

Features

•1 Common Drain Configuration
• Low-On Resistance
• Small Footprint of 2.2 mm × 1.15 mm
• Lead Free
• RoHS Compliant
• Halogen Free
• Gate ESD Protection 2 Applications
• Battery Management
• Battery Protection 3 Description This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices. Top View S1 S2 G1 G2 S1 S2 Configuration Product Summary TA = 25°C TYPICAL VALUE VS1S2 Source-.