SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Peak Collector Current ICP Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg VALUE 60 50 5.0 1.0 2.0 0.9 150 - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION.
E=2V
IC=500mA, IB=50mA NPN PNP
Base Emitter Saturation Voltage
VBE (sat)
IC=500mA, IB=50mA
MIN 60 50 5.0
60 30
DYNAMIC CHARACTERISTICS Transition Frequency Output Capacitance
fT VCE=10V, IC=50mA Cob VCB=10V,IE=0, f=1MHz
NPN PNP
CLASSIFICATION
*hFE
CSB764_CSD863Rev020206E
D 60 - 120
E 100 - 200
TYP MAX
1.0 1.0 320
0.5 0.7 1.2
TYP150
TYP12 TYP20
F 160 - 320
UNITS V V V A A W ºC ºC
UNITS V V V µA µA
V V V
MHz
pF pF
Continental Device India Limited
Data Sheet
Page 1 of 4
CSB764 PNP CSD863 NPN
TO-92L Plastic Package
CSB764_CSD863Rev020206E Continental Device India Limited
Data Shee.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD86311W1723 |
Texas Instruments |
Dual N-Channel Power MOSFET | |
2 | CSD86330Q3D |
Texas Instruments |
Synchronous Buck Power Block | |
3 | CSD86350Q5D |
Texas Instruments |
Synchronous Buck Power Block | |
4 | CSD86360Q5D |
Texas Instruments |
Synchronous Buck Power Block | |
5 | CSD83325L |
Texas Instruments |
12-V Dual N-Channel Power MOSFET | |
6 | CSD85301Q2 |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
7 | CSD85302L |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
8 | CSD85312Q3E |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
9 | CSD87312Q3E |
Texas Instruments |
Dual 30-V N-Channel Power MOSFET | |
10 | CSD87330Q3D |
Texas Instruments |
Synchronous Buck Power Block | |
11 | CSD87331Q3D |
Texas Instruments |
Synchronous Buck Power Block | |
12 | CSD87333Q3D |
Texas Instruments |
Synchronous Buck Power Block |