SYMBOL VCBO Collector Base Voltage(open emitter) VCEO Collector Emitter Voltage (open base) Emitter Base Voltage(open collector) Collector Current (DC) Collector Current (Pulse) Base Curent (DC) Total Power Dissipation@ Ta=25ºC Total Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature Range VEBO IC IC IB Ptot Ptot Tj Tstg VALUE >40 >30 >5.0 .
E =1mA Saturation Voltages VCE (sat)
* IC=2A, IB=0.2A VBE (sat)
* IC=2A, IB=0.2A IC=20mA,VCE=2V hFE
* DC Current Gain IC=1A,VCE=2V
*
* hFE
* Output Capacitance at f=1MHz Transition Frequency
* Pulse test : pulse width <350µs ; duty cycle <2%
*
*hFE classification : R : 60-120 Q: 100-200 P: 160-320 E: 200-400 Co fT IE =0, VCB =10V, IC=0.1A, VCE=5V
MIN
TYP
MAX 1.0 1.0
UNIT µA µA V V V V V
30 40 5 0.5 2.0 30 60 45 90 400
pF MHz
Continental Device India Limited
Data Sheet
Page 1 of 3
CSD882 TO126 Plastic Package TO-126 (SOT-32) Plastic Package
A N P B C
DIM A B C D E
MIN 7.4 10.5 2.4 0.7 0.49.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD880 |
CDIL |
Audio Frequency Power Amplifier | |
2 | CSD880 |
RECTRON |
Power Transistors | |
3 | CSD88537ND |
Texas Instruments |
60V Dual N-Channel Power MOSFET | |
4 | CSD88539ND |
Texas Instruments |
60V Dual N-Channel Power MOSFET | |
5 | CSD83325L |
Texas Instruments |
12-V Dual N-Channel Power MOSFET | |
6 | CSD85301Q2 |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
7 | CSD85302L |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
8 | CSD85312Q3E |
Texas Instruments |
20V Dual N-Channel Power MOSFET | |
9 | CSD863 |
CDIL |
EPITAXIAL PLANAR SILICON TRANSISTORS | |
10 | CSD86311W1723 |
Texas Instruments |
Dual N-Channel Power MOSFET | |
11 | CSD86330Q3D |
Texas Instruments |
Synchronous Buck Power Block | |
12 | CSD86350Q5D |
Texas Instruments |
Synchronous Buck Power Block |