This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low onresistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. Top View and Ci.
•1 Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
• Load Switch Applications
3 Description
This
–8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low onresistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View an.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD22204W |
Texas Instruments |
P-Channel Power MOSFET | |
2 | CSD22202W15 |
Texas Instruments |
P-Channel Power MOSFET | |
3 | CSD22202W15T |
Texas Instruments |
P-Channel Power MOSFET | |
4 | CSD22206W |
Texas Instruments |
P-Channel Power MOSFET | |
5 | CSD22206WT |
Texas Instruments |
P-Channel Power MOSFET | |
6 | CSD20060 |
ETC |
ZERO RECOVERY RECTIFIER | |
7 | CSD20060D |
ETC |
ZERO RECOVERY RECTIFIER | |
8 | CSD20L45CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
9 | CSD20N45 |
CASS |
N-Channel Trench Power MOSFET | |
10 | CSD23201W10 |
Texas Instruments |
P-Channel Power MOSFET | |
11 | CSD23202W10 |
Texas Instruments |
P-Channel Power MOSFET | |
12 | CSD23202W10T |
Texas Instruments |
P-Channel Power MOSFET |