The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications. Top View and Circuit Configuration G S S .
•1 Low Resistance
• Small Footprint 1.5 mm × 1.5 mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
2 Applications
• Battery Management
• Battery Protection
• Load Switch Applications
3 Description
The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Top View and Circuit Configuration
G
S
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD22202W15 |
Texas Instruments |
P-Channel Power MOSFET | |
2 | CSD22204W |
Texas Instruments |
P-Channel Power MOSFET | |
3 | CSD22204WT |
Texas Instruments |
P-Channel Power MOSFET | |
4 | CSD22206W |
Texas Instruments |
P-Channel Power MOSFET | |
5 | CSD22206WT |
Texas Instruments |
P-Channel Power MOSFET | |
6 | CSD20060 |
ETC |
ZERO RECOVERY RECTIFIER | |
7 | CSD20060D |
ETC |
ZERO RECOVERY RECTIFIER | |
8 | CSD20L45CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
9 | CSD20N45 |
CASS |
N-Channel Trench Power MOSFET | |
10 | CSD23201W10 |
Texas Instruments |
P-Channel Power MOSFET | |
11 | CSD23202W10 |
Texas Instruments |
P-Channel Power MOSFET | |
12 | CSD23202W10T |
Texas Instruments |
P-Channel Power MOSFET |