CSD19536KCS - Texas Instruments

CSD19536KCS 100V N-Channel Power MOSFET

This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 10 9 TC = 25°C, ID = 100A TC = 125°C, ID = 100A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE.

Features

• Ultra-low Qg and Qgd
• Low thermal resistance
• Avalanche rated
• Pb-Free terminal plating
• RoHS compliant
• Halogen free
• TO-220 plastic package 2 Applications
• Secondary side synchronous rectifier
• Motor control 3 Description This 100V, 2.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 10 9 TC = 25°C, ID = 100A TC = 125°C, ID = 100A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS Product Summary TA = 25°C TYPICAL VALUE VDS .