CSD19533Q5A - Texas Instruments

CSD19533Q5A 100V N-Channel Power MOSFET

This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Device CSD19533Q5A CSD19533Q5AT . Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available .

Features

•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 27 4.9 VGS = 6 V VGS = 10 V 2.8 8.7 7.8 UNIT V nC nC mΩ mΩ V 2 Applications
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control 3 Description This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed.