This 100 V, 3.1 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) . Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE .
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 3.1 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
Drain (Pin 2)
Gate (Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD19535KTT |
Texas Instruments |
100V N-Channel Power MOSFET | |
2 | CSD19531KCS |
Texas Instruments |
100V N-Channel Power MOSFET | |
3 | CSD19531Q5A |
Texas Instruments |
100V N-Channel Power MOSFET | |
4 | CSD19532KTT |
Texas Instruments |
100V N-Channel Power MOSFET | |
5 | CSD19532Q5B |
Texas Instruments |
100V N-Channel Power MOSFET | |
6 | CSD19533KCS |
Texas Instruments |
100V N-Channel Power MOSFET | |
7 | CSD19533Q5A |
Texas Instruments |
100V N-Channel Power MOSFET | |
8 | CSD19534KCS |
Texas Instruments |
100V N-Channel Power MOSFET | |
9 | CSD19534Q5A |
Texas Instruments |
100V N-Channel Power MOSFET | |
10 | CSD19536KCS |
Texas Instruments |
100V N-Channel Power MOSFET | |
11 | CSD19536KTT |
Texas Instruments |
100V N-Channel Power MOSFET | |
12 | CSD19537Q3 |
Texas Instruments |
100-V N-Channel Power MOSFET |