CSD19531Q5A - Texas Instruments

CSD19531Q5A 100V N-Channel Power MOSFET

This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D G4 D 5D P0093-01 . . Device CSD19531Q5A CSD19531Q5AT . Ordering Information Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all avail.

Features

•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 37 6.6 VGS = 6 V VGS = 10 V 2.7 6.0 5.3 UNIT V nC nC mΩ mΩ V 2 Applications
• Primary Side Telecom
• Secondary Side Synchronous Rectifier
• Motor Control 3 Description This 100 V, 5.3 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed.