This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TY.
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• D2PAK Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Hot Swap
• Motor Control
3 Description
This 100 V, 4.6 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE
Pin Out Drain (Pin 2)
Gate (Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltag.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD19532Q5B |
Texas Instruments |
100V N-Channel Power MOSFET | |
2 | CSD19531KCS |
Texas Instruments |
100V N-Channel Power MOSFET | |
3 | CSD19531Q5A |
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4 | CSD19533KCS |
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5 | CSD19533Q5A |
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6 | CSD19534KCS |
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7 | CSD19534Q5A |
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8 | CSD19535KCS |
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9 | CSD19535KTT |
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10 | CSD19536KCS |
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11 | CSD19536KTT |
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12 | CSD19537Q3 |
Texas Instruments |
100-V N-Channel Power MOSFET |