CSD17559Q5 - Texas Instruments

CSD17559Q5 N-Channel MOSFET

This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance V.

Features

•1 Extremely Low Resistance
• Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package 2 Applications
• Point of Load Synchronous Buck in Networking, Telecom, and Computing Systems
• Synchronous Rectification
• Active ORing and Hotswap Applications 3 Description This 30 V, 0.95 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Product Summary TA = 25°C VDS.