CSD17553Q5A - Texas Instruments

CSD17553Q5A N-Channel MOSFET

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 12 10 6D D 5D P0093-01 Text 4 Spacing RDS(on) vs VGS TC = 25°C Id = 20A TC = 125ºC Id = 20A PRODUCT SUMMARY VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 17.5 nC Qgd Gate Charge Gate to Drain 4.7 nC RDS(on) D.

Features

1
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package APPLICATIONS
• Point of load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Control and Synchronous FET Applications DESCRIPTION The NexFET power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 12 10 6D D 5D P0093-01 Text 4 Spacing RDS(on) vs VGS TC = 25°C Id = 20A TC = 125ºC Id = 20A PRODUCT SUMMARY VDS Drain to Source Voltage 30 V Qg Gate.