CSD17510Q5A - Texas Instruments

CSD17510Q5A N-Channel MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 6.4 Gate Charge Gate to Drain 1.9 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 1.5 V nC nC 5.

Features

1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
• Optimized for Control and Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 6.4 Gate Charge Gate to Drain 1.9 Dr.