CSD17552Q3A - Texas Instruments

CSD17552Q3A N-Channel MOSFET

This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold V.

Features

•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package 2 Applications
• Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
• Optimized for Control FET Applications 3 Description This 30 V, 5.5 mΩ, 3.3 mm × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain R.