This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 SPACE SPACE D 6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Volta.
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free
• RoHS Compliant
• Halogen Free
• SON 3.3 mm × 3.3 mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
• Optimized for Control FET Applications
3 Description
This 30 V, 7.8 mΩ, 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3 G4
SPACE SPACE
D
6D
5D
P0093-01
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain
RDS(o.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD17551Q5A |
Texas Instruments |
N-Channel MOSFET | |
2 | CSD17552Q3A |
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3 | CSD17552Q5A |
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4 | CSD17553Q5A |
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5 | CSD17555Q5A |
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6 | CSD17556Q5B |
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7 | CSD17559Q5 |
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8 | CSD17501Q5A |
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9 | CSD17505Q5A |
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10 | CSD17506Q5A |
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11 | CSD17507Q5A |
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12 | CSD17510Q5A |
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