CSD17522Q5A - Texas Instruments

CSD17522Q5A N-Channel MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Figure 1. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge Total (4.5V) 3.6 Gate Charge Gate to Drain 1.1 Drain to Source On Resistanc.

Features

1
•2 Optimized for 5V Gate Drive
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications. Figure 1. Top View S1 8D S2 7D S3 G4 D 6D 5D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 30 Gate Charge .