CPH5801 - Sanyo Semicon Device

CPH5801 N-Channel Silicon MOSFET

Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features · The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a sh.

Features

· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage.
· Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. Package Dimensions unit:mm 2171 [CPH5801] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [MOSFET] Drain-to-Source .