CPH5804 - Sanyo Semicon Device

CPH5804 P-Channel Silicon MOSFET

Ordering number : ENN6980 CPH5804 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5804 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET] • L.

Features

Package Dimensions
• Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3312) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. [MOSFET]
• Low ON-resistance. 2.9 54
• Ultrahigh-speed switching.
• 4V drive. [SBD]
• Short reverse recovery time.
• Low forward voltage. 1 0.95 0.6 1.6 0.6 2.8 [CPH5804] 3 2 0.4 0.15 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 0.7 0.2 0.9 0.4 SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Vol.