CPH5818 - Sanyo Semicon Device

CPH5818 P-Channel Silicon MOSFET

Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3339) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFE.

Features

Package Dimensions
• Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3339) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 54
• Low ON-resistance.
• Ultrahigh-speed switching. [SBD]
• Short reverse recovery time.
• Low forward voltage. 1 0.95 0.2 [CPH5818] 0.15 3 0.05 1.6 0.6 2.8 0.6 2 0.4 0.7 0.2 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.4 SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drai.