CPH5801 |
Part Number | CPH5801 |
Manufacturer | Sanyo Semicon Device |
Description | Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Features · The CPH5801 composite device consists of following two devices t... |
Features |
· The CPH5801 composite device consists of following two devices to facilitate high-density mounting. One is an N-channel MOSFET that features low ON resistance, high-speed switching, and low driving voltage. The other is a shottky barrier diode that features short reverse recovery time and low forward voltage. · Each device incorporated in the CPH5801 is equivalent to the 2SK3119 and to the SBS005, respectively. Package Dimensions unit:mm 2171 [CPH5801] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [MOSFET] Drain-to-Source ... |
Document |
CPH5801 Data Sheet
PDF 55.60KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH5803 |
Sanyo |
N-Channel Silicon MOSFET | |
2 | CPH5804 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
3 | CPH5805 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | CPH5809 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | CPH5810 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |