CPH5819 - Sanyo Semicon Device

CPH5819 DC / DC Converter Applications

www.DataSheet4U.com Ordering number : ENN7409 CPH5819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5819 DC / DC Converter Applications Features • Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density moun.

Features

• Package Dimensions Composite type with an N-Channel Sillicon MOSFET unit : mm (MCH3408) and a Schottky Barrier Diode (SBS006M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 5 4
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. [SBD] 1
• Short reverse recovery time. 0.95
• Low forward voltage. [CPH5819] 3 0.6 0.2 0.15 2 0.4 0.6 1.6 2.8 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.2 0.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu.