CPH3319 - Sanyo Semicon Device

CPH3319 Ultrahigh-Speed Switching Applications

www.DataSheet4U.com Ordering number : ENN7264 CPH3319 P-Channel Silicon MOSFET CPH3319 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3319] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolu.

Features

•
•
• Package Dimensions unit : mm 2152A [CPH3319] 2.9 0.4 0.15 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --12 ±8 --1.5 --6 0.9 150 --55 to +150 Unit V V A A W °C °C .