CPH3323 - Sanyo Semicon Device

CPH3323 Ultrahigh-Speed Switching Applications

Ordering number : ENN7368A CPH3323 www.DataSheet4U.com CPH3323 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowabl.

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings --60 ±20 --1 --4 1 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Vo.