CMBT3906 - CDIL

CMBT3906 SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base vol.

Features

al power dissipation up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j
  –t + Rth t
  –s + Rth s
  –a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector
  –emitter breakdown voltage
  –IC = 1 mA; lB = 0 Collector
  –base breakdown voltage
  –IC = 10µA; IE = 0 Emitter
  –base breakdown voltage —IE = 10 µA; IC = 0 Collector cut
  –off current
  –VCE = 30 V;
  –VEB = 3 V Base current with reverse biased emitter junction Output capacitance at f = 100 kHz IE = 0;
  –VCB = 5 V Input capacitance at f = 100 kHz IC = 0;
  –VBE = 0,5 V Saturati.