Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current -Continuous PD Device Dissipation FR-5 Board* Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient PD Device Dissipation Alumina Substrate** Derate above 25 deg C Rth (j-a) Thermal Resistance Junction to Ambient Junction and St.
, IB=O IC=10uA, IE=0 IE=10uA, IC=0 VCB=45V, IE=0 VALUE 60 60 6 50 225 1.8 556 300 2.4 417 -55 to +150 UNIT V V V mA mW mW/deg C deg C/W mW mW/deg C deg C/W deg C MIN 60 60 6.0 250 - TYP - MAX 10 10 10 800 0.35 0.95 UNIT V V V nA uA nA Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Noise Figure VCB=45V, IE=0 TA=150 deg C IEBO VEB=5V, IC=0 hFE IC=1mA, VCE=5V IC=10mA, VCE=5V VCE(Sat) IC=1mA,IB=0.1mA VBE(on) IC=1mA, VCE=5V V V Cobo Cibo NF VCB=5V, IE=0 f=1MHz VBE=0.5V, I.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CMBT200 |
Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 2 | CMBT200A |
Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 3 | CMBT2222 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 4 | CMBT2222A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | CMBT2369 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 6 | CMBT2907 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 7 | CMBT2907A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 8 | CMBT3903 |
CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | CMBT3904 |
CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 10 | CMBT3904E |
Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
|
| 11 | CMBT3905 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 12 | CMBT3906 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|