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www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT3903 CMBT3904 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT3903 = 1Y CMBT3904 = 1A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLU.
voltage (open emitter) Collector
–emitter voltage (open base) Emitter
–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature °C Junction temperature THERMAL RESISTANCE Tj = P (Rth j
–t + Rth t
–s + Rth s
–a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector
–emitter breakdown voltage IC = 1 mA; lB = 0 Collector
–base breakdown voltage IC = 10µA; IE = 0 Emitter
–base breakdown voltage IE = 10µA; IC = 0 Collector cut
–off current VCE = 30 V; VEB = 3 V Output capacitance at f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CMBT3903 |
CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 2 | CMBT3904E |
Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
|
| 3 | CMBT3905 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 4 | CMBT3906 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | CMBT3906E |
Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
|
| 6 | CMBT200 |
Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 7 | CMBT200A |
Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 8 | CMBT2222 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | CMBT2222A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 10 | CMBT2369 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 11 | CMBT2484 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 12 | CMBT2907 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|