CMBT3905 - CDIL

CMBT3905 SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3905 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3905 = 2Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base vol.

Features

open collector) Collector current (d.c.) Total power dissipation
* up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j
  –t + Rth t
  –s + Rth s
  –a) + Tamb Thermal resistance from junction to ambient
  –VCB0
  –VCE0
  –VEB0
  –IC Ptot Tstg max. max. max. max. 40 40 5 200 V V V mA max. 250 mW
  –55 to +150 °C Rth j
  –a = 200 °C/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Tamb = 25 °C unless otherwise specified Collector
  –emitter breakdown voltage
  –V(BR)CE0
  –IC = 1 mA; lB = 0 Collector
  –base breakdown voltage
  –V(BR)CB0
  –IC = 10µA; IE = 0 Emitter
  –base breakdown voltage .