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SYMBOL VALUE VCBO 60 Collector -Base Voltage VCEO 45 Collector -Emitter Voltage VEBO 6.0 Emitter Base Voltage IC 500 Collector Current - Continuous PD 350 Power Dissipation 2.8 Derate Above=25 deg C Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range Thermal Resistance (Rth j-a) 357 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg .
=4V, IE=0 50 IEBO VEB=4V, IC=0 50 Emitter Cut off Current hFE IC=100uA,VCE=1V CMBT200 80 DC Current Gain CMBT200A 240 IC=10mA,VCE=1V CMBT200 CMBT200A CMBT200A CMBT200 CMBT200A 100 300 100 100 100 450 600 350 -
UNIT V V V mA mW mW/deg C deg C
deg C/W UNIT V V V nA nA nA
IC=100mA,VCE=1V
* IC=150mA,VCE=5V
*
Continental Device India Limited
Data Sheet
Page 1 of 3
www.datasheet4u.com ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Noted) CMBT200, A DESCRIPTION SYMBOL TEST CONDITION MIN MAX 0.2 Collector Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1mA IC=200mA, IB=20mA
* 0.4 VBE(Sat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CMBT200A |
Continental Device India Limited |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 2 | CMBT2222 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 3 | CMBT2222A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 4 | CMBT2369 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | CMBT2484 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 6 | CMBT2907 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 7 | CMBT2907A |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 8 | CMBT3903 |
CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | CMBT3904 |
CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 10 | CMBT3904E |
Central Semiconductor |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
|
| 11 | CMBT3905 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 12 | CMBT3906 |
CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS |
|