CM1200HC-66H - Mitsubishi Electric

CM1200HC-66H IGBT

www.DataSheet4U.com PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H CM1200HC-66H q IC ...........

Features

. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Puls.