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The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate le.
■ Performances : 27-30GHz
■ 29dBm output power @ 1dB comp. gain
■ 15 dB ± 1dB gain
■ DC power consumption, 850mA @ 6V
■ Chip size : 3.80 x 2.52 x 0.05 mm
Gain & RLosses (dB)
20 15 10
5 0 S22 -5 -10 -15 S11 -20
20 22 24 26 28 30 32 34 36 Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB
Output power at 1dB.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA5290 |
United Monolithic Semiconductors |
17.7-24GHz Medium Power Amplifier |
|
| 2 | CHA5292A |
United Monolithic Semiconductors |
37-40GHz Medium Power Amplifier |
|
| 3 | CHA5293A |
United Monolithic Semiconductors |
17-24GHz High Power Amplifier |
|
| 4 | CHA5295 |
United Monolithic Semiconductors |
24.5-26.5GHz High Power Amplifier |
|
| 5 | CHA5297 |
United Monolithic Semiconductors |
37-40GHz High Power Amplifier |
|
| 6 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier |
|
| 7 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier |
|
| 8 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |
|
| 9 | CHA5266-QDG |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |
|
| 10 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 11 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 12 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier |
|