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The CHA5295 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the .
■ Performances : 24.5-26.5GHz
■ 30dBm output power @ 1dB comp.
■ 17 dB ± 1dB gain
■ DC power consumption, 800mA @ 6V
■ Chip size : 4.01 x 2.52 x 0.05 mm
32 30 28 26 24 22 20 18 16 14 12 10
24
P-1dB (dBm)
Linear Gain (dB)
PAE (%)
24,5 25 25,5 26 Frequency (GHz)
Typical on jig Measurements
26,5
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA5290 |
United Monolithic Semiconductors |
17.7-24GHz Medium Power Amplifier |
|
| 2 | CHA5292A |
United Monolithic Semiconductors |
37-40GHz Medium Power Amplifier |
|
| 3 | CHA5293A |
United Monolithic Semiconductors |
17-24GHz High Power Amplifier |
|
| 4 | CHA5296 |
United Monolithic Semiconductors |
27-30GHz High Power Amplifier |
|
| 5 | CHA5297 |
United Monolithic Semiconductors |
37-40GHz High Power Amplifier |
|
| 6 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier |
|
| 7 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier |
|
| 8 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |
|
| 9 | CHA5266-QDG |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |
|
| 10 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 11 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 12 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier |
|