The CHA5292a is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15µm gate length, via holes through th.
■ Performances : 37-40GHz
■ 24dBm output power @ 1dB comp. gain
■ 24 dB ± 1dB gain
■ DC power consumption, 500mA @ 3.5V
■ Chip size : 3.43 x 1.44 x 0.07 mm
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
24
20
16
12
8
4
0
-4
-8
-12
-16
S21 (dB)
S11 (dB)
S22 (dB)
-20 30 31 32 33 34 35 36 37 38 39 Frequency (GHz)
Min Typ Max Unit
Fop
Operati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA5290 |
United Monolithic Semiconductors |
17.7-24GHz Medium Power Amplifier | |
2 | CHA5293A |
United Monolithic Semiconductors |
17-24GHz High Power Amplifier | |
3 | CHA5295 |
United Monolithic Semiconductors |
24.5-26.5GHz High Power Amplifier | |
4 | CHA5296 |
United Monolithic Semiconductors |
27-30GHz High Power Amplifier | |
5 | CHA5297 |
United Monolithic Semiconductors |
37-40GHz High Power Amplifier | |
6 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier | |
7 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier | |
8 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier | |
9 | CHA5266-QDG |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier | |
10 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
11 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
12 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier |