CHA5266-99F - United Monolithic Semiconductors

CHA5266-99F 10-16 GHz Medium Power Amplifier

The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lit.

Features

■ Broadband performances: 10-16GHz.
■ 23dB Linear Gain.
■ 26.5dBm output power @ 1dB comp.
■ 36dBm OIP3.
■ DC bias: Vd=5.0Volt@Id=360mA.
■ Chip size 1.81x1.37x0.1mm. Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output IP3 Pout Output.