CHA5014-99F - United Monolithic Semiconductors

CHA5014-99F X Band HBT Driver Amplifier

The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transis.

Features

■ 30dBm Saturated output power
■ Temperature compensated Output power
■ Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit
■ Quiescent bias point: 8.5V@230mA
■ Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain (Tamb 20°C) Main Characteristics Tamb = +20°C, Vc = +8.5V (Pulse 100µs 20%) Symbol Parameter Min Typ Max Fop Operating frequency range 8.5 11 G Small signal gain 20 P1dB Output power at 1dB gain compression 29 Icq Power supply quiescent current 230 ESD Protections: Electrostatic discharge sensitive devic.