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The packaged monolithic microwave IC (MMIC) is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PMHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It i.
■ Performances: 24-26GHz
■ Gain = 19dB (typical)
■ Output power (P-1dB) 29dBm (typical)
■ SMD leadless package
■ Dimensions: 6.35 x 6.35 x 0.97 mm3
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side v.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CHA5093 |
United Monolithic Semiconductors |
22-26GHz High Power Amplifier |
|
| 2 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 3 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier |
|
| 4 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier |
|
| 5 | CHA5042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier |
|
| 6 | CHA5050-99F |
United Monolithic Semiconductors |
17-26GHz Medium Power Amplifier |
|
| 7 | CHA5050-QDG |
United Monolithic Semiconductors |
17-24GHz Medium Power Amplifier |
|
| 8 | CHA5115-99F |
United Monolithic Semiconductors |
X-band Medium Power Amplifier |
|
| 9 | CHA5115-QDG |
United Monolithic Semiconductors |
X-band Medium Power Amplifier |
|
| 10 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier |
|
| 11 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier |
|
| 12 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |
|