The CHA5050-QDG is a medium power amplifier four stages monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant .
■ Broadband performances: 17-24GHz
■ 22dB Linear Gain
■ 25dBm Pout @ 1dB comp
■ 30dBm Output IP3
■ DC bias: Vd=6.0Volt@Id=230mA
■ 24L-QFN4x4
■ MSL1
Main Electrical Characteristics
Tamb.= +25°C, Vd = Vd1 = Vd2 = Vd3 = Vd4 = 6.0V, Id = 230mA
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
17 24 GHz
Gain Linear Gain
22 dB
P1dB Output power @ 1dB compression
25 dBm
Psat Saturated output power
26 dBm
OIP3 Output IP3
30 dBm
Ref. : DSCHA5050QDG1216 - 04 Aug 11
1/14 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 12.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA5050-99F |
United Monolithic Semiconductors |
17-26GHz Medium Power Amplifier | |
2 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
3 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
4 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier | |
5 | CHA5042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
6 | CHA5093 |
United Monolithic Semiconductors |
22-26GHz High Power Amplifier | |
7 | CHA5093TCF |
United Monolithic Semiconductors |
24-26GHz High Power Amplifier | |
8 | CHA5115-99F |
United Monolithic Semiconductors |
X-band Medium Power Amplifier | |
9 | CHA5115-QDG |
United Monolithic Semiconductors |
X-band Medium Power Amplifier | |
10 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier | |
11 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier | |
12 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |