The CHA5050-99F is a four stage monolithic MPA that provides typically 25.5dBm of output power associated to 20% of power added efficiency at 3dB gain compression. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the subs.
0.25µm Power pHEMT Technology Frequency band: 17-26GHz Output power: 25.5dBm @ 3dBcomp Linear gain: 22dB Quiescent bias point: Vd=6V, Id=230 mA Chip size: 2.38x1.14x0.07mm Main Electrical Characteristics Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode. Symbol Parameter Freq Frequency range Gain Linear Gain Pout Output Power @1dB comp. Min Typ Max Unit 17.0 26.0 GHz 22.0 dB 25.0 dBm Ref.: DSCHA50502152 - 31 May 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CHA5050-QDG |
United Monolithic Semiconductors |
17-24GHz Medium Power Amplifier | |
2 | CHA5010B |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
3 | CHA5012 |
United Monolithic Semiconductors |
X Band Driver Amplifier | |
4 | CHA5014-99F |
United Monolithic Semiconductors |
X Band HBT Driver Amplifier | |
5 | CHA5042 |
United Monolithic Semiconductors |
13-16GHz High Power Amplifier | |
6 | CHA5093 |
United Monolithic Semiconductors |
22-26GHz High Power Amplifier | |
7 | CHA5093TCF |
United Monolithic Semiconductors |
24-26GHz High Power Amplifier | |
8 | CHA5115-99F |
United Monolithic Semiconductors |
X-band Medium Power Amplifier | |
9 | CHA5115-QDG |
United Monolithic Semiconductors |
X-band Medium Power Amplifier | |
10 | CHA5215A |
United Monolithic Semiconductors |
5.8GHz Medium Power Amplifier | |
11 | CHA5250-QDG |
United Monolithic Semiconductors |
5.5-9GHz Medium Power Amplifier | |
12 | CHA5266-99F |
United Monolithic Semiconductors |
10-16 GHz Medium Power Amplifier |